Physics of THz Field-Effect Transistors

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Device Physics of Solution-Processed Organic Field-Effect Transistors

Following the initial demonstration of field-effect conduction in small organic molecules and conjugated polymers, the community of industrial and academic research groups that are interested in using organic semiconductors as the active layer in organic field-effect transistor (OFET) devices has been growing steadily, particularly over the last four to five years. The Institute for Scientific ...

متن کامل

Chapter 2 . Physics of InAIAs / InGaAs Heterostructure Field - Effect Transistors

The goal of this project is to develop InAIAs/InGaAs heterostructure field-effect transistors suitable for millimeter-wave high-power applications. The suitability of this material system for low-noise amplification is now unquestionable. Obtaining a high breakdown voltage is, however, still rather difficult, and it usually comes with severe trade offs. This fact seriously limits the suitabilit...

متن کامل

fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Diamond Field Effect Transistors

High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...

متن کامل

Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2011

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.119.114